2 n2169 p np germanium transistor a d v a n c i n g t h e s e m i c o n d u c t o r i n d u s t r y s i n c e 1 9 7 2 ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 06/2013 abstract 2 n2169 is a bipolar germanium pnp transistor used for high speed switching. the herme tically sealed to - 9 metal can package is highly durable and contributes to the longevity of the device . t hrough - hole mounting style. maximum ratings e lectrical characteristics p icture serves as a representation only value unit v ces 15 v v c e o 15 v p d @ 25c 60 mw i c 100 ma value unit max i cbo 3 a h fe 40 min @ i c 10 ma v ce 0.5 v f t min. 450 mhz tr max. 18 nsec tf max. 18 nsec k' s 50 nsec c ob 2.5 pf v ce @i c =10ma 0.15 v v be @i c =10ma 0.36 v p ackage style to - 9 metal can
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